| 摘要 |
A method and structure for producing bumps on an IC package substrate. The method first deposits a medium layer on a protective layer of the IC package substrate, which has good adherence ability to both the copper layer and the protective layer. Then, a CVD process is applied to deposit a copper layer on the medium layer to form the metal layer. A dry film is thereafter formed on the metal layer and several contact widows are opened therein. A metal pad and a bump are electroplated in the contact windows. Then remove the dry film, the bumps are protruded out of the substrate with a predetermined height to be solder bumps with an IC chip. By said method, an IC chip no longer needs to form bumps thereon anymore and to save cost and reduce pitch between bumps down to 150 mum. And package size is scaled for smaller IC chips and for smaller component dimension.
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