| 发明名称 |
MOS LOW-VOLTAGE VERTICAL TRANSISTOR |
| 摘要 |
The invention relates to an MOS low-voltage vertical transistor (VMT), in which the rear drain electrode (12) is connected to a drain region (7) that extends vertically, by means of a plug (11) in an isolation layer (9). |
| 申请公布号 |
WO0241403(A2) |
申请公布日期 |
2002.05.23 |
| 申请号 |
WO2001DE04005 |
申请日期 |
2001.10.19 |
| 申请人 |
INFINEON TECHNOLOGIES AG;SOMMER, PETER;TIHANY, JENOE |
发明人 |
SOMMER, PETER;TIHANY, JENOE |
| 分类号 |
H01L21/8242;H01L29/06;H01L29/417;H01L29/45;H01L29/78;H01L29/786 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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