III-V composite semiconductor used for light-emitting diodes contains a p-type doping element

摘要

III-V composite semiconductor has the formula: InxGayAlzN (where x + y + z = 1.0) with an n-type carrier concentration of 1 x 19<19> cm<-3> or less. The concentration of a p-type doping element is 1 x 10<17>/cm<3> or more and 1 x 10<21>/cm<3> or less. An Independent claim is also included for a process for the production of the III-V composite semiconductor comprising growing a III-V composite semiconductor of formula: InxGayAlzN (where x + y + z = 1.0) at 600-950 deg C using an organo-metal vapor phase growing process. Preferred Features: The doping element is Mg and/or Zn.