发明名称 |
METHOD OF FORMING LIGHTLY DOPED REGIONS IN A SEMICONDUCTOR DEVICE |
摘要 |
A method is disclosed in which a lightly doped region in a semiconductor layer is obtained by diffusing dopant atoms of a first and second type into the underlying semiconductor layer. Preferably, the method is applied to the formation of lightly doped source and drain regions in a field effect transistor so as to obtain a required gradual dopant concentration transition from the general region to the drain and source regions for avoiding the hot carrier effect. Advantageously, a diffusion of the dopant atoms is initiated during an oxidizing step in which the thickness of the gate insulation layer is increased at the edge portions thereof.
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申请公布号 |
US2002061626(A1) |
申请公布日期 |
2002.05.23 |
申请号 |
US20010852535 |
申请日期 |
2001.05.10 |
申请人 |
FEUDEL THOMAS;HORSTMANN MANFRED;WIECZOREK KARSTEN |
发明人 |
FEUDEL THOMAS;HORSTMANN MANFRED;WIECZOREK KARSTEN |
分类号 |
H01L21/225;H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/336;H01L21/22;H01L21/38;H01L21/320;H01L21/476 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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