METHOD FOR PRODUCING FERROELECTRIC CAPACITORS AND INTEGRATED FERROELECTRIC SEMICONDUCTOR MEMORY ARRANGEMENT

摘要

The invention relates to a method for producing a ferroelectric capacitor, especially in large-scale integrated, non-volatile semiconductor memories, and to an integrated ferroelectric semiconductor memory arrangement. In order to prevent damage to the ferro- or paraelectric (6), a TaSixNy barrier layer (7) is deposited over the capacitor module (1). The TaSixNy material has barrier properties in relation to hydrogen diffusion and Ti diffusion.