Phase shift mask blank, phase shift mask, and method for manufacturing the same

摘要

An object of the present invention is to provide a half-tone phase shift mask blank and a half-tone phase shift mask of which a translucent film has improved acid resistance, alkali resistance and resistance to excimer laser irradiation while maintaining the internal stress of the film within an acceptable range for the intended use. To achieve the aforementioned object, the present invention provides a half-tone phase shift mask blank which comprises a transparent substrate having provided thereon a translucent film comprising at least one thin layer containing silicon and at least one of nitrogen and oxygen and which is to be exposed to light whose center wavelength is 248 nm or shorter, wherein said translucent film is dense such that it has a center-line surface roughness (Ra) of 0.3 nm or smaller.