发明名称 WAFER SHAPE EVALUATING METHOD AND DEVICE AND DEVICE PRODUCING METHOD, WAFER AND WAFER SELECTING METHOD
摘要 <p>A wafer shape evaluating method comprising the steps of measuring a wafer shape at specified intervals within a wafer surface, setting a first area (W1) for calculating a reference line or reference surface in a wafer surface according to the measured wafer shape, calculating a reference line (10a) or a reference surface (10b) in the first area (W1), setting a second area (W2) to be evaluated outside the first area, extrapolating the reference line (10a) or the reference surface (10b) up to the second area (W2), and analyzing the difference between the shape of the second area and the reference line or the reference surface in the second area to calculate it as surface characteristics, thereby evaluating the wafer outer periphery portion more correctly than by the conventional SFQR or the like; and a wafer shape evaluating device.</p>
申请公布号 WO0241380(A1) 申请公布日期 2002.05.23
申请号 WO2001JP09981 申请日期 2001.11.15
申请人 SHIN-ETSU HANDOTAI CO.,LTD.;MITSUBISHI DENKI KABUSHIKI KAISHA;KOBAYASHI, MAKOTO;MATSUKAWA, KAZUHITO;YAMAMOTO, HIDEKAZU;MAEJIMA, SHINROKU 发明人 KOBAYASHI, MAKOTO;MATSUKAWA, KAZUHITO;YAMAMOTO, HIDEKAZU;MAEJIMA, SHINROKU
分类号 G01B21/30;H01L21/66;(IPC1-7):H01L21/304 主分类号 G01B21/30
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