REFLECTIVE LAYER BURIED IN SILICON AND METHOD OF FABRICATION

摘要

A silicon wafer (12) having a distributed Bragg reflector (14) buried within it. The buried reflector provides a high efficiency, readily and accurately manufactured reflector with a body of silicon. A photodetector using the buried layer to form a resonant cavity enhancement of the silicon's basic quantum efficiencies and selectivity is provided. The DBR (14) is created by bonding of two or more substrates (20, 26) together at a silicon oxide interface (22) or an oxide-oxide interface. In the former, a hydrogen implant is used to cleave silicon just above the bond line. In the latter, the bonding is at the oxide layers.