| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to increase productivity and save fabricating cost by consecutively performing an etch process inside a chamber of an etcher, and to control generation of polymer by controlling the interval of time taken for the etch process. CONSTITUTION: A nitride layer(22) and an oxide layer(23) are sequentially formed on a semiconductor substrate(21). Photoresist(24) is applied on the oxide layer and is selectively patterned to define a contact region. The oxide layer and the nitride layer are selectively removed to expose a predetermined portion of the surface of the semiconductor substrate by using the patterned photoresist as a mask and by using CxFy, CxHyFz, O2 and Ar gas, so that a contact hole(25) is formed. CxHyFz, O2 and Ar gas is used regarding the semiconductor substrate to eliminate the polymer. The photoresist is removed and a cleaning process is performed.
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