发明名称 |
APPARATUS FOR PREVENTING UNNECESSARY LAYER FROM BEING DEPOSITED ON INNER WALL OF SPUTTERING APPARATUS |
摘要 |
PURPOSE: An apparatus for preventing an unnecessary layer from being deposited on the inner wall of a sputtering apparatus is provided to prevent cross contamination and to control plasma discharge in an unnecessary region of the apparatus, by installing a simple apparatus in a multi-target sputter having a batch-type chamber. CONSTITUTION: A vacuum chamber generates plasma discharge. One or more targets(200) is mounted on a surface of the vacuum chamber, composed of a predetermined material to deposit. A target supporting unit(300) supplies power for maintaining the plasma discharge, supporting the target and connecting the target to the vacuum chamber. The target material is deposited as a thin film type on one or more wafers(400) installed on a surface facing the target. An intercepting unit(500) intercepts plasma discharge particles facing outside and sputtered particles, surrounding the respective targets and a space between the respective wafers. A driving unit(600) mechanically drives the intercepting unit and transfers the intercepting unit to a direction opposite to the wafer, connected to the intercepting unit.
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申请公布号 |
KR20020037943(A) |
申请公布日期 |
2002.05.23 |
申请号 |
KR20000067948 |
申请日期 |
2000.11.16 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
CHO, SEONG HO;KWON, SEONG IL |
分类号 |
H01L21/203;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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