Non-volatile semiconductor memory device and fabrication process thereof

摘要

A fabrication process of a non-volatile semiconductor memory device includes the step of forming a plurality of openings in a device isolation structure defining an active region in a memory cell region such that each opening exposes the substrate surface extends from the active region to the outside thereof. Further, silicide regions are formed in the openings by a self-aligned process such that the silicide regions are mutually separated. Further a contact hole is formed in an interlayer insulation film in correspondence to the silicide regions.