Production of a ferroelectric capacitor used in the production of highly integrated non-volatile storage capacitors, especially FeRAMs, comprises inserting a dielectric between precious metal electrodes

摘要

Production of a ferroelectric capacitor comprises inserting a ferroelectric or para-electric material as dielectric (6) between precious metal electrodes (3, 4) of the capacitor (1); and depositing a TaSixNy layer as hydrogen diffusion barrier (7) over the capacitor to protect the ferroelectric or para-electric material from hydrogen used in the integration process. An Independent claim is also included for a highly integrated non-volatile storage capacitor. Preferred Features: The TaSixNy layer is structured so that it lies between an electrode plate of the capacitor and a Ti/TiN barrier layer in a neighboring through-hole filled with tungsten.