| 摘要 |
PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided to reduce interface resistance, by depositing a tungsten silicide layer on a polysilicon layer so that an ohmic contact is formed between the polysilicon layer and the tungsten silicide layer. CONSTITUTION: A gate insulation layer is formed on a semiconductor substrate(21). The polysilicon layer and the tungsten silicide layer are sequentially formed on the gate insulation layer. A diffusion barrier layer and a tungsten layer are sequentially formed on the tungsten silicide layer. A heat treatment process is performed regarding the semiconductor substrate to crystallize the diffusion barrier layer. The first insulation layer is formed on the tungsten layer. The first insulation layer, the tungsten layer, the diffusion barrier layer, the tungsten silicide layer, the polysilicon layer and the gate insulation layer are selectively patterned to form a gate electrode(29). A selective oxide process is performed regarding the gate electrode. The second insulation layer sidewall(30) is formed on both side surfaces of the gate electrode and the first insulation layer.
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