ION IMPLANTER

摘要

PURPOSE: An ion implanter is provided to prevent a wafer from being damaged by a wrong initial position of a platen, by installing a distance sensor capable of inspecting an initial horizontal state of the platen so that the horizontal state of the platen is inspected and the wafer is loaded. CONSTITUTION: A spacer for implanting ions to the wafer is formed in a chamber(301). The upper surface of the chamber is made of a transparent glass plate. An ion beam injecting unit(311) injects ion beams to the wafer, installed to penetrate the sidewall of the chamber. The wafer is loaded to the platen(307) installed in the lower portion of the chamber. A scan shaft(309) supports the platen from a portion lower than the platen. A plurality of distance sensors(315) are mounted on the glass plate to sense at least three different positions on the platen and to measure a distance. A horizontal control unit(317) compares input data when the values measured by the distance sensors are inputted and outputs a signal which determines a horizontal state of the platen.