| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce contact resistance of a contact plug by making amorphous silicon have the same crystalline structure as a material constituting a semiconductor substrate. CONSTITUTION: A plurality of gate electrodes(5) are formed on the semiconductor substrate(1). A selective epitaxial growth(SEG) process is performed regarding the gate electrode to form a growth layer. After at least one interlayer dielectric is formed on the resultant structure including the growth layer, a contact hole is formed to expose the growth layer. The amorphous silicon in which dopants are mixed at a predetermined ratio to fill the contact hole is formed, and a heat treatment process is performed regarding the amorphous silicon.
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