发明名称 MARK FOR MEASURING MISALIGNMENT OF PATTERN IN EXPOSURE APPARATUS
摘要 PURPOSE: Provided is a mark for measuring the misalignment of pattern in an exposure apparatus, which has a small distortion of the pattern and an excellent optical contrast. CONSTITUTION: The mark for measuring the misalignment contains: a rectangular first pad(41) formed on one side of a measuring mark formed area; the second pad(42) formed on the other side of the measuring mark formed area, which is faced with the first pad(41) and has the same size and shape as the first pad(41), wherein the line breadth of the first and the second pads is 1-2 micrometer; first, second, third, and forth lines(43a)(43b)(43c)(43d) formed at a fixed interval between the first pad(41) and the second pad(42); the first, second, third, forth, and fifth spaces(44a)(44b)(44c)(44d)(44e) formed between the lines(43a)(43b)(43c)(43d), which are standards to measure the amount of displacement.
申请公布号 KR20020038061(A) 申请公布日期 2002.05.23
申请号 KR20000068111 申请日期 2000.11.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, GU MIN;YANG, JIN SEOK
分类号 G03F9/00 主分类号 G03F9/00
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