| 摘要 |
PURPOSE: To provide a radiation sensitive resin composition, sensitive particularly o far UV and charged particle beams, such as electron beam, having superior resolution and pattern shape and suitable particularly for use as a chemical amplification type resist which has small nano-edge roughness. CONSTITUTION: The radiation sensitive resin composition contains (A) a radiation sensitive acid generating agent typified by 2,4,6- trimethylphenyldiphenylsulfonium2,4-difluorobenzenesulfonate or 2,4,6- trimethylphenyldiphenylsulfonium4-trifluoromethylbenzenesulfonate and (B) a resin, having an acetal structure typified by a resin obtained by substituting a 1-ethoxyethyl group or the 1-ethoxyethyl group and a t-butoxycarbonyl group or a t-butyl group for a part of the hydrogen atoms of phenolic hydroxyl groups in poly(p-hydroxystyrene).
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