| 摘要 |
PURPOSE: To form a silicide layer, by self-conformity process, on the diffusion region surface in a peripheral circuit region and on the bit line diffusion region surface in a memory cell region so that the short-circuiting between the bit line diffusion regions is surely avoided, related to a non-voltage semiconductor memory comprising a charge storage insulting film. CONSTITUTION: A plurality of opening parts separated from each other which extend outside from an active region to expose a substrate surface are formed in an element separation insulating film defining the active region in a memory cell region. At the opening parts, silicide layers separated each other are formed in self-conformity process. A contact hole is formed in an inter-layer insulating film corresponding to the silicide layer.
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