| 发明名称 |
RESIST RESIDUES REMOVING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
PURPOSE: To provide a resist residues removing method without deterioration of a semiconductor device as recesses on the layer insulation films, spread connection holes or roughed wirings, etc. CONSTITUTION: A process sequence involving a peeling liquid process using a fluoric peeling liquid for a process time so shortened as not deteriorating a semiconductor device is repeated at least twice.
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| 申请公布号 |
KR20020038460(A) |
申请公布日期 |
2002.05.23 |
| 申请号 |
KR20010043639 |
申请日期 |
2001.07.20 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MURANAKA SEIJI |
| 分类号 |
G03F7/40;B08B3/08;G03F7/42;H01L21/027;H01L21/304;H01L21/306;H01L21/768;(IPC1-7):H01L21/304 |
主分类号 |
G03F7/40 |
| 代理机构 |
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