| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce a junction leakage caused by generation of thermal field emission current and to improve a refresh time characteristic, by forming an impurity region for reducing contact resistance of a storage node at both ends of a gate. CONSTITUTION: An isolation layer(32) is formed in a field region of a semiconductor substrate(31). A gate electrode(34) is formed in an active region of the semiconductor substrate by interposing a gate insulation layer(33). The first and second insulation layer sidewalls are formed on both side surfaces of the gate electrode. The first impurity region(38) for reducing an electric field of the gate is formed in the surface of the semiconductor substrate by using the first and second insulation layer sidewalls and the gate electrode as a mask. The second impurity region(39) for reducing an electric field of the isolation layer is formed in the surface of the semiconductor substrate by using the first and second insulation layer sidewalls and the gate electrode as a mask, deeper than the first impurity region. The second insulation layer sidewall is eliminated. The third impurity region(40) for reducing contact resistance of a storage node is formed between the first and second impurity regions in the surface of the semiconductor substrate by using the first insulation layer sidewall and the gate electrode as a mask.
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