| 摘要 |
A method for forming a wiring structure in a semiconductor device, comprising the steps of: (a) forming an insulating layer of a low dielectric constant material having a relative dielectric constant of 3.5 or less and a pyrolysis initiation temperature of 400° C. or lower on a substratum and then forming an opening portion and/or a trench portion in the insulating layer, (b) forming a barrier metal layer on the insulating layer including an inside of the opening portion and/or the trench portion, (c) forming a thin layer on the barrier metal layer, and (d) forming a refractory metal layer on the thin layer to fill the inside of the opening portion and/or trench portion with the refractory metal layer, the thin layer being composed of a metal or a metal compound which is less easily oxidizable than a material constituting the barrier metal layer.
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