发明名称 |
Semiconductor integrated circuit with resistor and method for fabricating thereof |
摘要 |
A resistor which have a stable resistance value and a method for fabricating the same without increasing the area of a semiconductor integrated circuit. To prevent a dishing phenomenon, the resistor is formed on the dummy gate electrode structure which have been formed in a peripheral circuit region and/or it is formed between a pair of dummy bit line structures. Regardless of a process condition the width and height of the resistor can be determined in a certain range with use of the capping layer and spacers of the dummy gate electrode structure and/or the capping layer and/or spacers of the dummy bit line structure.
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申请公布号 |
US2002060351(A1) |
申请公布日期 |
2002.05.23 |
申请号 |
US20010903826 |
申请日期 |
2001.07.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN SOO-HO;YANG WON-SUK |
分类号 |
H01L27/02;H01L21/02;H01L27/06;(IPC1-7):H01L21/20;H01L29/00 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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