Radiation-emitting semiconductor body used as a light emitting diode comprises a radiation-producing layer sequence and a window layer having one or a number of subsequent aluminum gallium arsenide layers produced by liquid phase epitaxy

摘要

Radiation-emitting semiconductor body (1) comprises a radiation-producing layer sequence (2) and a window layer (3) partially permeable to radiation produced. The window layer has one or a number of subsequent AlGaAs layers (4, 5, 6) produced by liquid phase epitaxy or a similar process. The AlGaAs layers have an Al content which increases in the direction of the layer sequence. An Independent claim is also included for a process for the production of the radiation-emitting semiconductor body comprising preparing an epitaxial substrate, growing AlGaAs layers on the substrate using liquid phase epitaxy, and then growing the radiation-producing layer sequence on the AlGaAs layers using organometal gas phase epitaxy or molecular beam epitaxy. Preferred Features: The AlGaAs layer (6) lying next to the layer sequence has a passivating layer in the transition region to the layer sequence. The transition region has a thickness of 10-30 nm.