Method of manufacturing a double sided processed integrated circuit forming a contact structure for connecting metallizing structures of each individual chip

摘要

The method of manufacturing a double sided processed integrated chip involves providing, on one side of a silicon wafer with a thickness of around 0.8 mm, a circuit structure. A metalization structure is provided over the circuit structure. A similar circuit structure and metalization structure are provided on the other side of the wafer. The electric insulation of the two circuit structures is provided only by the undoped silicon material of the wafer lying between them. A contacting structure is formed to connect the two metalization layers of each individual chip.