| 摘要 |
PURPOSE: A method for driving a non-volatile ferroelectric memory device is provided, which performs a write and a read operation uniformly in a whole cell array without depending on a position, and reduces a cell size by reducing a minimum sensing voltage. CONSTITUTION: The non-volatile ferroelectric memory device comprises a main cell(MC) and a reference cell(RC), which comprises the first voltage applying line(word line) and a bit line and one transistor and at least one ferroelectric capacitor between the second voltage applying lines. According to the method, the word line and a reference word line are first activated to a high level in an active section of one cycle. The word line and the reference word line are inactivated. After the word line is inactivated, a sensing amplifier is activated. Under the condition that the sensing amplifier is activated, the word line is activated to a high level at second time. And a high level is applied to the second voltage applying line at least more than one time so that it coincides with the second activation section of the word line at least at one point. Then, it is precharged by a transition of the chip enable signal from a low level to a high level.
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