发明名称 |
Verbesserte elektrische Verbindungen zu dielektrischen Materialien |
摘要 |
A preferred embodiment of this invention comprises an oxidizable layer (e.g. tantalum 48), an oxygen gettering layer (e.g. platinum/tantalum mixture 34) overlaying the oxidizable layer, a noble metal layer (e.g. platinum 36) overlaying the oxygen gettering layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlaying the noble metal layer. The novel structures presented provide electrical connection to high-dielectric-constant materials without the disadvantages of current structures. The oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the lower electrode or at the lower electrode/substrate interface. The oxygen gettering layer acts as a gettering site for oxygen, where the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides/suboxides (e.g. tantalum pentoxide 40) that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom. This invention provides a stable and electrically conductive electrode for high-dielectric-constant materials while using standard integrated circuit materials to facilitate and economize the manufacturing process. <IMAGE> |
申请公布号 |
DE69430405(D1) |
申请公布日期 |
2002.05.23 |
申请号 |
DE1994630405 |
申请日期 |
1994.01.27 |
申请人 |
TEXAS INSTRUMENTS INC., DALLAS |
发明人 |
GNADE,BRUCE E.;SUMMERFELT, SCOTT R. |
分类号 |
H01L27/04;H01L21/02;H01L21/3205;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/320 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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