Radiation-emitting semiconductor element comprises a silicon carbide-based substrate having a number of gallium nitride-based layers containing an active region arranged between an n-conducting layer and a stressed p-conducting layer

摘要

Radiation-emitting semiconductor element comprises a silicon carbide-based substrate (1) having a number of gallium nitride-based layers containing an active region (3) arranged between an n-conducting layer (2) and a stressed p-conducting layer (4). An independent claim is also included for a process for the production of the radiation-emitting semiconductor element comprising preparing a crystal surface having a lattice constant larger than the lattice constant of the p-conducting layer, applying the p-conducting layer onto the crystal surface, and doping the p-conducting layer with an acceptor material. Preferred Features: The p-conducting layer is doped with Mg, Zn and/or C. The p-conducting layer contains AlGaN. The n-conducting layer contains AlGaN. The Al content in the n-conducting layer increases in the direction of the substrate.