发明名称 Positive photoresist composition
摘要 A positive photoresist composition includes (A) an alkali-soluble resin and (B) a photosensitive ingredient, in which the photosensitive ingredient (B) includes an ester of a compound represented by following Formula (I) with a 1,2-naphthoquinonediazidosulfonyl compound: This positive photoresist composition can form a resist pattern mixture including both a dense pattern and an isolation pattern with good shapes and can especially minimize the formation of a back taper shape of an isolation pattern induced by shift of the focus to the minus side.
申请公布号 US2002061458(A1) 申请公布日期 2002.05.23
申请号 US20010949863 申请日期 2001.09.12
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 HIDESAKA SHINICHI;SAWANO ATSUSHI
分类号 C08K5/00;C08K5/42;C08L101/00;G03F7/004;G03F7/022;G03F7/032;H01L21/027;(IPC1-7):G03F7/023;G03F7/30 主分类号 C08K5/00
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