A plasma processing system (110) includes an electrode assembly (150) having a metal drive electrode (154) coupled to the source electrode (152). Source electrode (152) is further provided with an insulating layer (151) on its backside face. The insulating layer (151) is the contact layer between metal drive electrode (154) and source electrode (152). Additionally, source electrode (152) is provided with various front face contours (261, 262, 263, 264). The front face of source electrode (152) is exposed to the reactor chamber 142 of plasma processing system (110) during use. The source electrode is attached to metal drive electrode (154) using fasterners (133) that do not introduce contaminants into the plasma processing chamber.
申请公布号
WO0209241(A3)
申请公布日期
2002.05.23
申请号
WO2001US22509
申请日期
2001.07.19
申请人
TOKYO ELECTRON LIMITED;SIRKIS, MURRAY, D.;STRANG, ERIC, J.