发明名称 |
Magneto-resistive random-access memory device uses selection transistors of wide channel width associated with several magnetic tunnel junction memory cells |
摘要 |
The memory device has a matrix of magnetic tunnel junction memory cells (1), each connected between a bit line (B1-B4) and a plate line (PL), with selection transistors coupled to the plate line connected at their gate electrodes to perpendicular word lines (W1-W4). Each selection transistor is associated with several magnetic tunnel junction memory cells, with its channel width determined by the number of associated magnetic tunnel junction memory cells.
|
申请公布号 |
DE10056159(A1) |
申请公布日期 |
2002.05.23 |
申请号 |
DE20001056159 |
申请日期 |
2000.11.13 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HOENIGSCHMID, HEINZ;BOEHM, THOMAS;ROEHR, THOMAS |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L27/22;G11C11/02;G11C11/14 |
主分类号 |
G11C11/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|