| 摘要 |
PURPOSE: A method for fabricating a metal gate of a semiconductor device is provided to form a uniform profile of a gate and to prevent charge-up damage, by varying an application period and an interception period of bias power so that a process condition is precisely varied. CONSTITUTION: A gate oxide layer, a polycrystalline silicon layer and a tungsten layer are sequentially deposited on a semiconductor substrate. A hard mask is formed on the tungsten layer. A part of the tungsten layer and the polycrystalline silicon layer under the tungsten layer are etched to form a metal gate by a plasma etch process in which the bias power is applied by a time modulation method having the application period and interception period of the bias power.
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