| 摘要 |
A surface emitting semiconductor laser capable of improving high temperature properties is provided. In a surface emitting semiconductor laser, a well width of an active layer is set at from 4 nm to 6 nm and the number of wells thereof is set at one or two. In addition, above and below the active layer, InGaAlP system clad layers are formed, and in a stacking direction of the active layer, through the above and below clad layers each, further above and below thereof, light reflecting layers are formed.
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