发明名称 |
Method for making transistor structure having silicide source/drain extensions |
摘要 |
A MOSFET includes a double silicided source/drain structure wherein the source/drain terminals include a silicided source/drain extension, a deep silicided source/drain region, and a doped semiconductor portion that surrounds a portion of the source/drain structure such that the silicides are isolated from the MOSFET body node. In a further aspect of the present invention, a barrier layer is formed around a gate electrode to prevent electrical shorts between a silicided source/drain extension and the gate electrode. A deep source/drain is then formed, self-aligned to sidewall spacers that are formed subsequent to the silicidation of the source/drain extension.
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申请公布号 |
US2002060346(A1) |
申请公布日期 |
2002.05.23 |
申请号 |
US20010947155 |
申请日期 |
2001.09.05 |
申请人 |
CHENG PENG;DOYLE BRIAN;BAI GANG |
发明人 |
CHENG PENG;DOYLE BRIAN;BAI GANG |
分类号 |
H01L21/336;H01L29/417;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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