ATTENUATING EXTREME ULTRAVIOLET (EUV) PHASE-SHIFTING MASK FABRICATION METHOD

摘要

An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask (60) can include providing a multi-layer mirror (34) over an integrated circuit substrate (32) or a mask blank, providing a buffer layer (36) over the multi-layer mirror (34), providing a dual element material layer (38, 40) over the buffer layer (36), and selectively growing feature (66) on the integrated circuit substrate (32) or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer (38, 40).