| 摘要 |
PURPOSE: Provided are a photoresist polymer for a resist flow process and a photoresist composition containing the photoresist polymer, by which the contact hole pattern with less than 100nm is obtained uniformly. CONSTITUTION: The photoresist polymer is represented by the formula 1 and the photoresist composition contains the photoresist polymer represented by the formula 1, a photoacid generator, an organic solvent, and additionally a polymer represented by the formula 2, wherein R1, R2, R7, and R8 are hydrogen or methyl, R3, R4, R6, and R9-R13 are hydrogen or substituted or unsubstituted C1-C10 straight or branched alkyl, R5 is an acid labile protecting group, n is an integer of 1-5, and a:b:c is 0-70:10-70:0-20mol%. The photoresist polymer represented by the formula 1 is poly{4-£2-(hydroxyphenyl)propyl|phenyl methacrylate/t-butyl acrylate/styrene}. |
