| 摘要 |
<p>An electron beam exposure system for exposing wafers by a plurality of electron beams, comprising an electron beam generator for generating a plurality of electron beams, a first deflection unit for deflecting a plurality of electron beams independently, a current amount acquiring unit for acquiring respective current amounts of a plurality of electron beams, a correction value calculating unit for calculating a correction value for correcting the irradiation positions of a plurality of electron beams, and a deflection control unit for controlling a deflection unit based on a correction value.</p> |
