| 摘要 |
<p>A semiconductor structure (400) and method for forming a semiconductor structure including a high dielectric constant material includes a monocrystalline semiconductor substrate (401), one or more layers of a stoichiometric monocrystalline, high dielectric constant material (404), and one or more layers of a non-stoichiometric, high dielectric constant material (405). The high dielectric constant material may include a monocrystalline alkali earth metal titanate, such as (Ba,Sr)TiO3. Semiconductor devices fabricated in accordance with the present invention exhibit reduced leakage current density.</p> |
