| 摘要 |
PURPOSE: A method for fabricating a pad of a semiconductor device is provided to improve a metal peel-off phenomenon in a micro-ball grid array(BGA) package process and to increase a bonding ability generated in a pull-up process. CONSTITUTION: A plurality of the first metals(20) are formed on a pad(10), isolated from each other. The first, second and third insulation layers(30,40,50) like a spin-on-glass(SOG) layer are formed on the resultant structure including the first metal so that the first intermetal dielectric(IMD)(60) is formed. A plurality of the first via holes(70) are formed in the IMD layer between the first metals. A plurality of the second metals(80) connected to the via holes are formed. The fourth, fifth and sixth insulation layers(90,100,110) like an SOG layer are formed on the resultant structure including the second metal so that the second IMD(120) is formed. A plurality of the second via holes(130) are formed in the second IMD between the second metals. The third metal(140) connected to the second via hole is formed.
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