| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern-forming material suitable in lithography using active rays such as ultraviolet rays, far-ultraviolet rays, electron beams, ion beams or X-rays regarding the photolithographic step in a semiconductor manufacturing process. SOLUTION: This pattern-forming material is a compound of the general formula 1. The other objective method for producing the compound of the general formula 1 comprises a reaction between an exo-8-alkyl-endo-8- hydroxytricyclo[5.2.1.02,6] decane or exo-8-alkyl-endo-8- hydroxytricyclo[5.2.1.02,6]dec-3(4)-ene of the general formula 2 and an acrylic halide derivative of the general formula 3 in the presence of a base (in the general formulas 1, 2 and 3, R1 is a 1-10C alkyl; R2 is H or a 1-4C alkyl; R3 and R4 are each H or a 1-10C alkyl; X is a halogen; and the broken line represents a signal or double bond).
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