| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputter deposition method by which film-thickness uniformity can be improved without changing film quality when sputter deposition is carried out while making travel speed in the reciprocating motion of a magnet in a substrate transfer direction nearly equal to substrate transfer speed, in a substrate transfer type continuous sputter deposition system having a plurality of magnetron sputtering mechanisms. SOLUTION: In this method, sputter deposition is successively carried out while making a substrate face two of the magnetron sputtering mechanisms in succession in the substrate transfer type continuous sputter deposition system having the plurality of magnetron sputtering mechanisms 11 to 18. The phase of the reciprocating motion of the magnet 56 is shifted between the two magnetron sputtering mechanisms. Further, in the reciprocating motion of the magnet 56 in the magnetron sputtering mechanisms, transfer speed in the direction of easy flow is made different from transfer speed in the opposite direction in a manner to satisfy the desired conditions.
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