| 摘要 |
PROBLEM TO BE SOLVED: To reduce the generation of voids in an Si-concentrated layer in the formation of the Si concentrated layer on the surface of the material to be treated. SOLUTION: An Si-concentrated layer is formed on the surface of the material to be treated of an iron based alloy or the like by a high temperature process such as a molten salt electrodeposition method. At this time, as the material to be treated, a material containing Si diffusion suppressing elements are used. A concentrated layer of the Si-diffusion suppressing elements is formed on the boundary part between the Si concentrated layer and the material to be treated. The concentrated layer suppresses the diffusion of Si, so that voids are made hard to be generated. Further, it is possible that the Si-concentrated layer may be formed after the formation of the film of the Si diffusion suppressing elements. Further, the Si-diffusion suppressing elements may be incorporated into the material containing Si acted on the material to be treated. Further, a counter electrode composed of the Si diffusion suppressing elements may be used in the molten salt electrodeposition method. As the Si-diffusion suppressing elements, e.g. Ti, Al and Ni may be used.
|
