发明名称 MAGNETRON SPUTTERING SYSTEM, AND METHOD OF THIN FILM DEPOSITION BY MAGNETRON SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering system and a method of thin film deposition by magnetron sputtering by which film deposition rate can be increased and a thin film having excellent characteristics can be deposited. SOLUTION: The magnetron sputtering system and the method of thin film deposition by magnetron sputtering are constituted so that sputtering is performed by: using, as magnetic poles 11, superconducting magnetic poles obtained by magnetizing a bulk superconductor; disposing the two magnetic poles 11 so that they are apart from and opposed to each other; generating, between the magnetic poles 11, a strong magnetic field by the interaction between the magnetic forces of the respective magnetic poles; and allowing a target 20 containing raw materials for thin film to exist in the magnetic field. The strong magnetic field having wide distribution can be easily formed, and plasma suited to sputtering can be effectively concentrated on the surface of the target by placing the target in the magnetic field. As a result, film deposition rate can be increased, and also the thin film having excellent characteristics can be deposited.
申请公布号 JP2002146529(A) 申请公布日期 2002.05.22
申请号 JP20000338503 申请日期 2000.11.07
申请人 AISIN SEIKI CO LTD 发明人 OKA TETSUO;ITO YOSHITAKA;YANAGI YOSUKE;YOSHIKAWA MASAAKI;MIZUTANI UICHIRO;IKUTA HIROSHI
分类号 C01G1/00;C01G3/00;C23C14/35;(IPC1-7):C23C14/35 主分类号 C01G1/00
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