| 摘要 |
PURPOSE: A contact hole of a semiconductor device is provided to reduce storage node contact resistance and to improve a refresh characteristic by extending the bottom area of the second contact hole formed on a poly plug. CONSTITUTION: A gate electrode(43) and impurity regions at both sides of the gate electrode are formed in a substrate(41). A semiconductor plug meets an impurity region at one side of the gate electrode. An interlayer dielectric is formed on the entire surface including the semiconductor plug. The width of the bottom is more extended than that of a lower portion adjacent to the bottom so that a contact hole is formed in the interlayer dielectric to expose the upper portion of the semiconductor plug.
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