发明名称 DEVELOPING SOLUTION FOR PHOTORESIST AND METHOD FOR DEVELOPING PHOTORESIST
摘要 PROBLEM TO BE SOLVED: To provide a safe developing solution for photoresist which ensures good resolution and produces few harmful effects on the environment and to provide a method for developing the photoresist. SOLUTION: The developing solution for photoresist contains 80-95% aliphatic hydrocarbon mixture containing >=80% n-heptane and 5-20% monocyclic aromatic hydrocarbon mixture containing >=80% 9C alkylbenzene. The photoresist is developed with the developing solution.
申请公布号 JP2002148819(A) 申请公布日期 2002.05.22
申请号 JP20000343885 申请日期 2000.11.10
申请人 TOSHIBA CORP 发明人 INOUE YOSHIAKI;HYODO TOSHIAKI
分类号 G03F7/32;H01L21/027;(IPC1-7):G03F7/32 主分类号 G03F7/32
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