| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor thin film for a photovoltaic element or the like having high quality and superior uniformity by transmitting a comparatively large microwave supply power to a discharge space stably for a long time to form a homogeneous plasma, in forming a deposited film on a base body by a plasma CVD process. SOLUTION: The equipment is provided with a vacuum container 102 having an exhaust means, a means 205 for supplying a gaseous starting material for deposited film formation in the vacuum container, and a microwave supply means for feeding a microwave power for the purpose of producing plasma out of the gaseous starting material for deposited film formation. In this equipment for forming a deposited film on a base plate installed in the vacuum container by the microwave plasma CVD process, a groove-shaped dielectric window 104 is arranged on the face that is exposed to the plasma of the microwave supply means.
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