MASK FOR MEASURING COMA ABERRATION OF PROJECTION LENS USED IN SEMICONDUCTOR EXPOSURE AND METHOD FOR MEASURING COMA ABERRATION USING THE SAME

摘要

PURPOSE: A method for measuring coma aberration of a projection lens used in a semiconductor exposure process is provided to quantitatively calculate a vertical direction component and a horizontal direction component, by preventing a defect of the semiconductor exposure process caused by the coma aberration of the projection lens. CONSTITUTION: A pattern of a ring type is formed on a mask. An exposure process is performed regarding the ring-type pattern on photoresist(15) of a wafer(14) by using the mask. The line width between an inner circle and an outer circle of the exposed ring-type pattern on the photoresist is measured in a vertical orthogonal line and a horizontal orthogonal line passing through the center of the outer circle. The coma aberration component of the projection lens(13) is calculated by the line width in the vertical direction of the measured ring-type pattern and by the line width in the horizontal direction of the measured ring-type pattern.