MEW GROUP IV METAL PRECURSOR AND CHEMICAL VAPOR DEPOSITION METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a group IV metal precursor having excellent volatility and thermal properties and chemical stability to hydrolysis, and suitable for the chemical vapor deposition for a multicomponent metal oxide thin film containing a group IV metal such as titanium in particular. SOLUTION: This new group IV metal precursor consists of a complex (L)2 composed of a tridentate ligand (L) of the general formula (R1 and R2 are each a 1-8C straight-or branched-chain alkyl; and R3 is a 1-8C straight-or branched-chain alkylene) and a tetravalent group IV metal (M). Using the precursor, a metal oxide thin film is formed by chemical vapor deposition.