ION BEAM IRRADIATION METHOD AND RELATED METHOD, AND APPARATUS

摘要

PURPOSE: To suppress charging of a substrate surface at ion beam irradiation. CONSTITUTION: When a treatment of ion implantation or the like is applied by irradiating an ion beam 14 to a substrate 2, the charging of the substrate surface accompanied with the ion beam irradiation is suppressed by supplying a plasma 30 discharged from a plasma generator 20 to the neighborhood of the substrate 2. At this time, if a beam current of the ion beam 14 irradiated to the substrate 2 is defined as IB, the ionic current representing the amount of ions discharged from the plasma generator 20 as II, and electronic current representing the amount of electronic current in the plasma 30 as IE, the ratio represented by IE/IB is kept not less than 1.8, and the ratio represented as II/IE is kept not less than 0.07 but not more than 0.7.