| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal silicon wafer formed to have improved quality and to attain improved yield of a device by distributing an OSF region widely from the peripheral part to the center part in an ingot, generating a low density fine vacancy defect region where FDP does not exist and only DSOD exists inside the OSF region and reducing or finally removing a coarse vacancy defect region where FDP and DSOD coesist, the ingot and a manufacturing method thereof. SOLUTION: The single crystal silicon wafer has the center axis and possesses a 1st region where the FPD and DSOD coesist, a 2nd region formed from the outside of the 1st region toward the peripheral part of the wafer and where the FPD does not exist and only the DSOD exists, a 3rd region formed from the outside of the 2nd region toward the peripheral part of the wafer and where the OSF region exists and a 4th region formed between the 3rd region and the wafer peripheral part and where only the vacancy non-defect region exists or a flocculation vacancy non-defect region and an interstitial non-defect region coexist. |
