发明名称 |
JOINTED BODY OF SILICON CARBIDE SINTERED COMPACT, MEMBER FOR PRODUCING SEMICONDUCTOR USING THE SAME AND METHOD OF PRODUCING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a jointed body of SiC sintered compacts being the jointed body whose jointing strength is always high. SOLUTION: SiC sintered compacts 1 and 2, each obtained by pressureless sintering and having a bulk density of >=2.8 g/cm3 are jointed to each other through a jointing part 3 comprising Si and filling parts 4 and 5 comprising Si which is filled in open pores 1a and 2a opening to the jointing face of the SiC sintered compacts and being unified with the Si at the jointing part 3.
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申请公布号 |
JP2002145677(A) |
申请公布日期 |
2002.05.22 |
申请号 |
JP20000341881 |
申请日期 |
2000.11.09 |
申请人 |
TOSHIBA CERAMICS CO LTD |
发明人 |
TSUYUKI TATSUYA;SUZUKI SHUNICHI;ICHIJIMA MASAHIKO |
分类号 |
C04B37/00;H01L21/302;H01L21/3065;(IPC1-7):C04B37/00;H01L21/306 |
主分类号 |
C04B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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